Agnit Semiconductors, a Bangalore-based startup, is positioning itself at the forefront of India’s burgeoning chip ecosystem by developing gallium nitride (GaN) semiconductors.
GaN technology, widely considered superior to traditional silicon in high-power and high-frequency applications, is key to Agnit’s ambition to capture sectors like defense, telecom, and power conversion, where efficiency and performance gains are paramount.
“We’re tackling the core problem of efficiency in high-power and high-frequency systems,” says Hareesh Chandrasekhar, Agnit Semiconductors' CEO. “The advantages GaN has over silicon—higher power density, faster switching speeds, and better thermal performance—make it ideal for next-gen applications in sectors like 5G infrastructure and defense communications.”
Unlike silicon, which has long been the dominant material in semiconductor fabrication, gallium nitride offers distinct advantages that can significantly reduce energy losses and improve performance in power conversion systems.
These advantages are critical for industries focused on high-efficiency power conversion and radio frequency (RF) systems, including defence, electronics and telecommunications.
The startup recently announced that it has secured $3.5 million in a seed funding round led by 3one4 Capital and Zephyr Peacock, with participation from Lakshmi Narayanan, former CEO of Cognizant.
Agnit is currently incubated at the Indian Institute of Science (IISc) in Bangalore, where it has access to one of India’s first pilot production facilities for GaN semiconductors, set up by the Ministry of Electronics and Information Technology (MeitY).
India’s semiconductor ecosystem
India has set its sights on becoming a major player in the global semiconductor market, an industry currently dominated by countries like Taiwan, South Korea, and the United States.
The government’s ambitious plans, including the $10 billion production-linked incentive (PLI) scheme for semiconductor and display manufacturing, have been launched to create an end-to-end semiconductor manufacturing ecosystem in the country.
The incubation of startups like Agnit at state-of-the-art facilities signals an important step in the ecosystem’s development.
“We’re among the first companies working with GaN technology at this scale in India,” the Chandrasekhar notes.
“Having access to a pilot production facility like the one at IISc allows us to work closely with researchers and tap into a talent pool that is essential for our growth.”
Defence and telecom key markets
The defense sector requires high-performance semiconductors for communications, radar, and electronic warfare systems, areas where GaN’s ability to handle high frequencies and power densities offers significant advantages.
Similarly, telecom operators, especially those deploying 5G infrastructure, require components that can handle the high data rates and low latency demands of next-gen networks.
GaN-based transistors, with their faster switching speeds, can enhance efficiency and performance of 5G base stations.
“GaN allows for smaller, more efficient power supplies, which are crucial as we move towards denser 5G networks,” said Chandrasekhar.
“This isn’t just about making faster devices; it’s about ensuring that the power consumption and heat generation are kept in check while delivering high performance," he added.
Global opportunity
The MeitY pilot production facility at IISc, where Agnit is incubated, is part of a larger effort to build infrastructure for semiconductor research and production in India.
“This partnership with IISc and the government is instrumental,” the CEO of Agnit says. “It allows us to bridge the gap between research and commercial production, something that’s been missing in India’s semiconductor landscape.”
As India continues to invest in semiconductor infrastructure, Agnit is betting that its early move into GaN technology will position it as a leader not only domestically but also in the global semiconductor market. “Our aim is to scale GaN production for both domestic and international markets,” the CEO adds.
Meanwhile, for now, Agnit will be using thhe $3.5 million funding to enhance the company’s production capabilities. “The funds will allow us to fast-track our product development and expand our team,” said Chandrasekhar said.
In the immediate term, Agnit plans to focus on developing prototypes and scaling up its production capabilities at the IISc facility, where it’s incubated.
The startup is working on getting its GaN devices into pilot projects with defense and telecom clients in India, aiming to establish a foothold in the market within the next 12 to 18 months.
"The next step is to bring these solutions to the market and showcase how GaN can outperform traditional silicon in critical applications."
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