HomeNewsOpinionSemiconductors | How MEITY’s incentive scheme will impact silicon fabs

Semiconductors | How MEITY’s incentive scheme will impact silicon fabs

From the point of view of financial and technological capability, India stands a chance of getting more mature node fab applicants than advanced node fab applicants

September 29, 2022 / 09:58 IST
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Representative image (Shutterstock)
Representative image (Shutterstock)

The Ministry for Electronics and Informational Technology (MEITY) announced an incentive scheme in December 2021 to boost the semiconductor ecosystem in India. With initial overlay of Rs 76,000 crore, the scheme had provisions to provide financial incentives ranging from 30-50 percent of either the total project cost, or the capital expenditure depending on the type of manufacturing facility proposed.

On September 21, the Union Cabinet approved modifications to the scheme. Notably, different kinds of manufacturing units such as packaging units or compound semiconductors fabs, as well as silicon fabs of all technology nodes are now eligible for up to 50 percent incentives from the Centre. Incentives continue to be upfront on pari-passu basis subject to approval.

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As per the ministry, there is now a realisation and acceptance that chips made using the so-called trailing edge nodes still have a healthy market, and are key in the Indian context for variety of applications in automotive, power electronics, consumer electronics, and in certain aspects of smartphones and other communication modules.

Technology node — or process node as it is usually referred to, in the semiconductor industry in general and in semiconductor fabrication facilities or fabs in particular — traditionally indicate the effective length of the channel that conducts electrons from source to drain in a transistor, controlled by the voltage applied to the gate. Smaller this dimension, faster can be the electron movement as well as the switching speed of the transistor. Moreover, the shrinkage in the channel length will correspondingly help shrink other dimensions horizontally and vertically thereby being able to arrange more transistors in the same area, and reduce the power needed.